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| 0405SC-1000M Rev C 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar. The device is an addition to a series of High Power Silicon Carbide Transistors from Microsemi PPG. CASE OUTLINE 55KT FET (Common Gate) 1 = Drain 2 = Gate 3 = Source ABSOLUTE MAXIMUM RATINGS Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 250V -1V -65 to +150C +250C ELECTRICAL CHARACTERISTICS @ 25C SYMBOL Idss Igss JC1 CHARACTERISTICS Drain-Source Leakage Current Gate-Source Leakage Current Thermal Resistance TEST CONDITIONS VGS = -20V, VDG= 125V VGS = -20V, VDS = 0V MIN TYP MAX 750 50 0.15 UNITS A A C/W FUNCTIONAL CHARACTERISTICS @ 25C, Vdd = 125V, Idq(ave) = 250 mA, Freq = 406, 425, 450 MHz, GPG Pin d Po +1dB Vgs Feb 2009 Common Gate Power Gain Input Power Drain Efficiency Load Mismatch Power Output - Higher Drive Gate source Voltage Pout = 1000 W, Pulsed Pulse Width = 300us, DF = 10% F = 450 MHz, Pout =1000W F = 406 MHz, Pout = 1000W F = 450 MHz, Pin = 180 W Set for Idq(ave) = 250mA 8 50 8.5 140 155 10:1 dB W % W Volts 1100 3.0 10.0 Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. 0405SC-1000M Rev C 0405SC-1000M Typical RF Performance Curve gain 12 10 Gain(db) 8 6 4 2 0 10 20 40 82 Pin(W) drain efficiency 60% 55% 50% 45% Drain eff (%) 40% 35% 30% 25% 20% 15% 10% 10 20 40 82 Pin(W) 132 164 181 Pout 0405SC-1000M: Gain & Pout 300us 10% 125V 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 132 164 181 0405SC-1000M: drain efficiency 300us 10% 125V Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. Pout(W) 0405SC-1000M Rev C 0405SC-1000M Test Circuit board Source Pulser Part C1, C15 C2 C3, C9 C4 C5 C6, C11 C7 C8 C10 C12 C13, C14 C16 C17 C18 C19 Note 0405SC-1000M Test Circuit Components Designations and Values Description Part Description 270 pF chip capacitor (ATC 100B) L1 5 turns 18AWG IDIA 0.2 in 3.3 pF chip capacitor (ATC 100B) L3 6 turns 18AWG IDIA 0.2 in 15 pF chip capacitor (ATC 100B) L2, L4 Ferrite Coil inductor 4.7 pF chip capacitor (ATC 100B) Z1 70 x 296 mils (W X L) 22 pF chip capacitor (ATC 100B) Z2 70 x 1160 mils (W X L) 33 pF chip capacitor (ATC 100B) Z3 200 x 1085 mils (W X L) 470 pF chip capacitor (ATC 100B) Z4 397 x 390 mils (W X L) 300 pF chip capacitor (ATC 100B) Z5 150 x 240 mils (W X L) 20 pF chip capacitor (ATC 100B) Z6 150 x 1276 mils (W X L) 3.3+10 pF chip capacitor (ATC 100B) Z7 190 x 433 mils (W X L) 1.8 pF chip capacitor (ATC 100B) Z8 71 x 2011 mils (W X L) 330 pF chip capacitor (ATC 100B) Z9 71 x 94 mils (W X L) 1000pF chip capacitor(ATC 900C) Z10 415 x 401 mils (W X L) 0.1uF chip capacitor(ATC 920C) Z11 150 x 2404 mils (W X L) 1000uF Electrolytic Capacitor PCB RG6006 r=6.15, 50 mils, 1 oz All Z dimentions included bend Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. 0405SC-1000M Rev C 0405SC-1000M Impedance Information Input Matching Network Output Matching Network ZS ZL Typical Impedance Values Frequency (MHz) 406 425 450 ZS() 1.33 - j1.30 1.35 - j 0.95 1.33 - j 0.596 ZL() 2.14 + j0.67 1.89 + j 0.98 1.49 + j 1.43 * VDD = 125V, IDQ = 250 mA, Pout = 1000W * Pulse Format: 300s, 10% Long Term Duty Factor Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. 0405SC-1000M Rev C 0405SC-1000M Case Outline 55 KT FET Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi..com or contact our factory direct. |
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